| PART |
Description |
Maker |
| VG3617161ET-8 VG3617161ET-7 |
CMOS Synchronous Dynamic RAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
Vanguard International Semiconductor Corporation
Vanguard International Semiconductor, Corp.
|
| VG36128161BT VG36128401BT VG36128801BT |
CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| VG36646141BT-10 VG36641641BT |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor
|
| VG36644080/1641DTL-8H |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor
|
| VG36644080_1641DTL-6 VG36641641DT VG36648041DT VG3 |
CMOS Synchronous Dynamic RAM 同步动态随机存储器的CMOS
|
Vanguard International Semiconductor, Corp.
Electronic Theatre Controls, Inc.
Vanguard International Semiconductor Corporation
List of Unclassifed Manufacturers
|
| KM44V4104BK KM44V4104B |
4M x 4Bit CMOS Dynamic RAM
V(cc): -0.5 to 4.6V; 1W; 50mA; 4M x 4-bit CMOS dynamic RAM with extended data out
|
Samsung semiconductor
Samsung Electronic
|
| MB81F643242B-10FN-X |
MEMORY CMOS 4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM
|
Fujitsu Component Limited.
|
| MH16S64PHB-6 B99031 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
From old datasheet system
1073741824-BIT ( 16777216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MB811171622A-125 |
CMOS 2×512K×16 Bit
Synchronous Dynamic RAM(CMOS 2×512K×16 位同步动态RAM)
|
Fujitsu Limited
|
| GM71V18163C GM71V18163C-5 GM71V18163C-6 GM71V18163 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
